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| (R) BAR 42 BAR 43, A, C, S SMALL SIGNAL SCHOTTKY DIODES K N.C. A A K1 K2 BAR42/BAR43 BAR43A K A1 A1 K2 K1 DESCRIPTION General purpose metal to silicon diodes featuring very low turn-on voltage and fast switching. A2 A2 BAR43C SOT-23 (Plastic) BAR43S ABSOLUTE RATINGS (limiting values) Symbol VRRM IF IFSM Ptot Tstg Tj TL Parameter Repetitive peak reverse voltage Continuous forward current Surge non repetitive forward current Power dissipation (note 1) Maximum storage temperature range Maximum operating junction temperature * Maximum temperature for soldering during 10s tp=10ms sinusoidal Tamb = 25C Value 30 100 750 250 - 65 to +150 150 260 Unit V mA mA mW C C C Note 1: for double diodes, Ptot is the total power dissipation of both diodes. *: 1 dPtot thermal runaway condition for a diode on its own heatsink < dTj Rth(j-a) THERMAL RESISTANCE Symbol Rth(j-a) Test conditions Junction-ambient * Value 500 Unit C/W * Mounted on epoxy board with recommended pad layout. June 1999 - Ed: 2A 1/4 BAR 42/BAR 43, A, C, S ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol VBR VF * Tj = 25C Tj = 25C Test Conditions IR = 100A BAR 42 BAR 43 All IR ** Pulse test: Min. 30 IF = 10 mA IF = 50 mA IF = 2 mA IF = 15 mA IF = 100 mA 0.26 Typ. 0.35 0.5 Max. 0.4 0.65 0.33 0.45 1 500 100 Unit V V Tj = 25C Tj = 100C * tp = 380s, < 2% ** tp = 5 ms, <2% VR = 25V nA A DYNAMIC CHARACTERISTICS Symbol C trr * Test Conditions Tj = 25C Tj = 25C Irr = 1mA Tj = 25C F = 45Mhz VR = 1V IF = 10 mA RL = 100 RL = 50 K Vi = 2V F = 1MHz IR = 10 mA CL = 300 pF for BAR 43 80 Min. Typ. 7 Max. 5 Unit pF ns % * Detection efficiency. Fig. 1-1: Forward voltage drop versus forward current (typical values, low level). IFM(A) 2.00E-2 1.80E-2 Tj=100C Fig. 1-2: Forward voltage drop versus forward current (typical values, high level). IFM(A) 5E-1 Tj=100C 1.60E-2 1.40E-2 Tj=25C 1E-1 Tj=50C 1.20E-2 1.00E-2 8.00E-3 6.00E-3 4.00E-3 Tj=50C 1E-2 Tj=25C VFM(V) 0.00E+0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 2.00E-3 VFM(V) 1E-3 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 2/4 BAR 42/BAR 43, A, C, S Fig. 2: Reverse leakage current versus reverse voltage applied (typical values). IR(A) 1E+2 Tj=100C Fig. 3: Reverse leakage current versus junction temperature. IR(A) 1E+4 VR=30V 1E+3 1E+1 1E+2 1E+0 Tj=50C 1E+1 1E+0 1E-1 Tj=25C 1E-1 VR(V) 1E-2 0 5 10 15 20 25 30 1E-2 0 25 50 Tj(C) 75 100 125 150 Fi g . 4: Junction capacitance versus reverse voltage applied (typical values). C(pF) 10 F=1MHz Tj=25C Fig. 5: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy FR4 with recommendedpad layout, e(Cu)=35m). Zth(j-a)/Rth(j-a) 1.00 = 0.5 5 = 0.2 0.10 = 0.1 2 Single pulse T VR(V) 1 1 2 5 10 20 30 0.01 1E-3 1E-2 1E-1 tp(s) 1E+0 =tp/T tp 1E+1 1E+2 Fig. 6: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printedcircuit board FR4, copper thickness:35m). Rth(j-a) (C/W) 350 P=0.25W 300 250 200 S(Cu) (mm ) 150 0 5 10 15 20 25 30 35 40 45 50 3/4 BAR 42/BAR 43, A, C, S PACKAGE MECHANICAL DATA SOT 23 (Plastic) E A REF. e B e1 D S A1 L H c A A1 B c D e e1 E H L S DIMENSIONS Millimeters Inches Min. Max. Min. Max. 0.89 1.4 0.035 0.055 0 0.1 0 0.004 0.3 0.51 0.012 0.02 0.085 0.18 0.003 0.007 2.75 3.04 0.108 0.12 0.85 1.05 0.033 0.041 1.7 2.1 0.067 0.083 1.2 1.6 0.047 0.063 2.1 2.75 0.083 0.108 0.6 typ. 0.024 typ. 0.35 0.65 0.014 0.026 FOOT PRINT DIMENSIONS 0.9 0.035 0.9 0.035 1.1 0.043 2.35 0.92 1.9 0.075 1.45 0.037 1.1 0.043 mm inch 0.9 0.035 Ordering type BAR42 BAR43 BAR43S BAR43C Marking D94 D95 DB1 DB2 Package SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 Weight 0.01g 0.01g 0.01g 0.01g 0.01g Base qty 3000 3000 3000 3000 3000 Delivery mode Tape & reel Tape & reel Tape & reel Tape & reel Tape & reel BAR43S DA5 Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in lifesupport devices or systems without express writtenapproval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4 |
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